Hot-Carrier Degradation of NMOSFET
نویسندگان
چکیده
منابع مشابه
Comprehensive Physical Modeling of Nmosfet Hot-carrier-induced Degradation
The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7/~m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a ...
متن کاملPhysics-Based Modeling of Hot-Carrier Degradation
We present and verify a physics-based model of hot-carrier degradation (HCD). This model is based on a thorough solution of the Boltzmann transport equation. Such a solution can be achieved using either a stochastic solver based on the Monte Carlo approach or a deterministic counterpart that is based on representation of the carrier energy distribution function as a series of spherical harmonic...
متن کاملA Numerical Simulation of Hot-carrier Induced Device Degradation
For radical designs the hot-carrier reliability is an important issue. This creates the need for the numerical simulation of hot-carrier induced degradation. From a design point of view, the goal of the degradation simulation will be the hot-carrier aging simulation for the prediction of device lifetime. This simulation requires a complicated set of physical models, which includes the hot-carri...
متن کاملReduced temperature dependence of hot carrier degradation in deuterated nMOSFETs
Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the VT -shift shows a remarkable absence of temperature dependence for the deuterated samples...
متن کاملThe Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation
An overview of recent developments for solving the Boltzmann transport equation for semiconductors in a deterministic manner using spherical harmonics expansions is given. The method is an attractive alternative to the Monte Carlo method, since it does not suffer from inherent stochastic limitations such as the difficulty of resolving small currents, excessive execution times, or the inability ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Korea Academia-Industrial cooperation Society
سال: 2009
ISSN: 1975-4701
DOI: 10.5762/kais.2009.10.12.3626